EOT indium gallium arsenide photodetector，Small size and bandwidth>10GHz

Internal voltage bias, DC to22GHzOptional external wall plug-in power supply, fiber optic coupling, or free space options

EOTCharacteristics of indium gallium arsenide detector:

-Small footprint

-Internal voltage bias

-Bandwidth>10GHz

-DC to22GHz

-Optional external wall plug-in power supply, fiber optic coupling, or free space options

EOTApplication of near-infrared photodetectors:

-Monitoring and AdjustmentQOutput of laser

-Monitor the output of the mode-locked laser

-Monitor the output of externally modulated continuous lasers

-High frequency and heterodyne applications

-Time domain and frequency response measurement

Short wave near-infrared indium gallium arsenide photodetector includesPINPhotodiodes utilize the photovoltaic effect to convert light power into electrical current.EOTIndium gallium arsenide photodetectoralso known asEOTInGaAs、EOTNear infrared photodetector、Shortwave infrared indium gallium arsenide photodetector、Short wave near-infrared indium gallium arsenide photodetector、InGaAsPINPhotodiode detector、EOT photodetector、Indium gallium arsenide photodiode detectorwait.

Typical includes visible light and near-infraredEOTThe responsivity of indium gallium arsenide photodetectors is as follows:

ET-3500、ET-4000Suitable for short wave visible light region,3500F、ET-3600、ET-4000FSuitable for near-infraredIThe application of the district,ET-5000、ET-5000FSuitable for near-infraredIIDistrict. The meaning of model determination:

2 representsSilicon，3representativeInGaAs，4representativeGaAs，5representativeExtendedInGaAs，ETIt's the manufacturerEOT

The abbreviation.Short wave near-infrared indium gallium arsenide photodetector, ternary material_Inx₁Ga-xAsIt is fromGaAsandInAs

The direct bandgap semiconductor formed by the mixed solid solution has a wide range of applications due to differences in the band composition caused by different component ratios.50EOT near-infrared photodetector connected to oscilloscopeWhen the resistance is Ω, the pulse width of the laser can be measured. When indium gallium arsenidePIN50The photodiode detector is connected to the spectrum analyzer

When the resistance is Ω, the frequency response of the laser can be measured.In EOT near-infrared photodetectors,>10GHzThe photodetector comes with an internal bias power supply composed of long-life lithium batteries. Insert the coaxial cable into the photodetectorBNC50Output connector, can be terminated at oscilloscope or spectrum analyzer

Ω is enough.Rise of short wave near-infrared indium gallium arsenide photodetector/fall time300ps(Typical), impact degree0.47A/W@830nmThe power supply requires DC and bandwidth>2GHzOutput connectorBNCThe characteristics are small footprint, internal voltage bias, and direct current to22GHz

Optional external wall plug-in power supply, fiber optic coupling, or free space options.

What is the principle of detection?

During the process of photoelectric conversion, the detector not only provides voltage and current signals that characterize the measured object, but also generates voltage and current signals accompanied by useless noise. This is a fluctuating signal whose magnitude determines the detection capability of the detector.

The main indicators of EOT near-infrared photodetectors are as follows:1) Photocurrent is the photocurrent generated by a photodetector under incident light, while dark current is the leakage current of the detector in the absence of light. Its size affects the sensitivity of the optical receiver and is one of the main indicators of the detector. Dark current includes the following types: minority carrier diffusion current at the boundary of the depletion region, generation of current carriers-Composite current and surface leakage current.EOTDark Current of Near Infrared Photodetectors<0.1nA

.2) The dark current and noise of a detector are inseparable. Generally, the noise of a photodetector is mainly divided into dark current noise, shot noise, and thermal noise: dark current noise, shot noise, and thermal noise.EOTNoise of near-infrared photodetectors<0.01pW/Hz

.EOTSpecification of indium gallium arsenide photodetector